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Inspection Of Recombination Active Defects For Sige And Solar Cells
Published online by Cambridge University Press: 15 February 2011
Abstract
Mapping Low Angle Light Scattering method (MLALS) is proposed to study defect structure in materials used for solar cell production. Several types of defects are observed in Czochralski Si1−xGex (0.022<x<0.047) single crystals. Recombination activity of these defects is investigated. The possibility of contactless visualisation of grain boundary recombination in polysilicon is also demonstrated.
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- Copyright © Materials Research Society 1997
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