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Intense Visible Luminescence from Thermally-Oxidized Porous Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
Photoluminescence from porous silicon oxidized at 800 or 900°C in an N2 +O2 gas mixture has been investigated. The ideal passivation of the porous Si surface with thermally grown oxide results in stable, intense visible-light emission. The steady-state and time-resolved luminescence measured as functions of temperature and excitation power have indicated that a possible pathway for the light emission is the radiative recombination through localized states.
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- Copyright © Materials Research Society 1993
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