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Interdiffusion in Exchange Biased NiFe/IrMn/CoFe Electrode in Magnetic Tunnel Junctions

Published online by Cambridge University Press:  17 March 2011

Jay H. Lee ,
Hee D. Jeong ,
Il C. Rho ,
Chong S. Yoon  and
Chang K. Kim
Jay H. Lee
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
Hee D. Jeong
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
Il C. Rho
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
Chong S. Yoon
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
Chang K. Kim
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
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Abstract

Extent of Mn diffusion to the plasma-oxidized AlOx tunnel barrier of magnetic tunnel junction was examined using Auger Electron Spectroscopy (AES) and X-Ray Photoelectron Spectroscopy (XPS). A magnetic film stack consisting of Ta/AlOx/CoFe/IrMn/NiFe/Ta was deposited with the AlOx layer treated under different plasma oxidation durations. AES depth profiles showed that Mn diffusion to the AlOx/CoFe interface increased with increasing oxidation after annealing at 300°C. XPS analysis indicated that Mn found at the CoFe/AlOx interface in the over-oxidized electrode was in the form of MnO2. Our research suggests that Mn diffusion was accelerated by preferential oxidation of Mn at the CoFe/AlOx interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 690: Symposium F – Spintronics , 2001 , F3.9
Copyright
Copyright © Materials Research Society 2002

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References

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