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Interfacial Reactions of Titanium Thin Films on P+-Implanted (001)Si

Published online by Cambridge University Press:  26 February 2011

M. H. Wan ,
W. Lur ,
H. C. Cheng  and
L. J. Chen
M. H. Wan
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
W. Lur
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
H. C. Cheng
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

Interfacial reactions of titanium thin films on P+-implanted silicon have been studied by transmission electron microscopy.

The presence of titanium thin films on P+-implanted silicon was found to alter the defect configuration in the recrystallized layer. Interfacial reactions of titanium thin films on silicon were also found to be influenced by the presence of dopants as well as changes in the microstructures of the substrate. The results are compared with those found in previous studies of Ti thin films on ion-implanted silicon as well as on unimplanted samples. The mechanisms for the chaiiges in defect configuration and phase formation are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 93
Copyright
Copyright © Materials Research Society 1988

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References

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