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Intermediate Layers in the A-Si:H Growth Processes
Published online by Cambridge University Press: 10 February 2011
Abstract
The intermediate layers (IL) exist at the boundary between liquid (plasma, gas) and solid phases during production processes of a-Si:H. The IL properties differ from the properties of the boundary regions anomaly. The substance in IL is in a strong nonequilibrium state of the bifurcation or the cascade of bifurcations. The processes in the IL determine the properties and the structure of the material being produced.
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- Copyright © Materials Research Society 1996
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