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Internal Stresses In Amorphous Mocvd SiO2 Films

Published online by Cambridge University Press:  21 February 2011

Seshu B. Desu
Seshu B. Desu*
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061.
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Abstract

Amorphous SiO2 films were deposited by the low pressure pyrolysis of organometallic precursors at temperatures of 350 to 500°C. Films were deposited on both single crystal silicon and fused quartz substrates. Intrinsic stresses in the films were measured by a curvature method as a function of deposition conditions and thermal processing conditions. As–deposited films showed significant tensile stress of the order of 400 MPa. The intrinsic stresses in the films increased as the deposition temperature decreased and deposition pressure increased. Small concentrations of dopants like B2O3 and P2O5 significantly decreased the intrinsic stress of as–deposited films. Stress reduction was also achieved by post deposition annealing. SiO2 film stress is correlated to the Si-O-Si bond angle distribution in the structure of the resultant film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 221
Copyright
Copyright © Materials Research Society 1990

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References

1)Rancourt, J.D. and Martin, R.L. Jr., SPIE Vol.678, 185 (1986).Google Scholar
2)Desu, S.B., J.Am.Ceram.Soc., 72, 1615 (1989).Google Scholar
3)Nagasima, N., J.Appl.Phys., 43, 3378 (1972).Google Scholar
4)Smolinsky, G. and Wendling, T.P.H.F., J.Electrochem.soc., 132, 950 (1985).Google Scholar
5)Pan, J.T. and Blech, I., J.Appl.Phys., 55, 8 (1984).Google Scholar
6)Lucovsky, G., et al., J.Vac.Sci.Technol., B5, 530 (1987).Google Scholar
7)Geissberger, A.E. and Galeener, F.L., Phys.Rev., B28, 3266 (1983).Google Scholar