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Investigations Of The Chemical-Mechanical Polishing Of Polymer Films For ILD Applications

Published online by Cambridge University Press:  15 February 2011

Jan. M. Neirynck ,
S. P. Murarka  and
R. J. Gutmann
Jan. M. Neirynck
Affiliation:
Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, NY, 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, NY, 12180
R. J. Gutmann
Affiliation:
Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, NY, 12180
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Abstract

Low dielectric constant films are being investigated as the interlayer dielectric (ILD) in a multilevel interconnection scheme for advanced ULSI circuits. In such applications they will be subjected to planarization processes using chemical-mechanical polishing (CMP), either directly during dielectric planarization or indirectly in the final stages of metal patterning using the Damascene process. In this paper we report the results of our initial investigations of the CMP of three different polymers, all with dielectric constant in the range of 2.3 – 2.7 and with different mechanical and chemical properties. The CMP was carried out using alumina as the abrasive in basic and acidic pH slurries. The effect of preannealing the polymer on the CMP behavior was also investigated

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 381: Symposium F – Low-Dielectric Constant Materials--Synthesis and Applications in Micro. , 1995 , 229
Copyright
Copyright © Materials Research Society 1995

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References

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