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Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon

Published online by Cambridge University Press:  22 February 2011

S. Coffa ,
A. Battaglia  and
F. Priolo
S. Coffa
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57, 195129 Catania, Italy.
A. Battaglia
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57, 195129 Catania, Italy.
F. Priolo
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57, 195129 Catania, Italy.
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Abstract

The mechanisms of defect accumulation and dynamic annealing in ion-implanted crystalline and amorphous Si are elucidated by performing conductivity and Raman spec-trascopy measurements in-situ during ion irradiation. In amorphous Si the entire gamut of defect structures has been characterized by analyzing the annealing kinetics from 77 K to ~ 800 K both during and after irradiation. Moreover the modifications in the electronic properties of crystalline Si produced by ion-irradiation have been investigated. The use of in-situ techniques in combination with transmission electron microscopy and deep-level transient spectroscopy allowed us to demonstrate the correlation between structural and electrical defects produced by ion-irradiation in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 3
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Vook, F. L. and Stein, H. J., Rad. Eff. 2, 23 (1969).Google Scholar
2 Gibbons, J. F., Proceedings of the IEEE, 60, 1062 (1971).Google Scholar
3 Morehead, F. F. and Crowder, B. L., Rad. Eff. 25, 49 (1980).Google Scholar
4 Svensson, B. G., Jagadish, C. and Williams, J. S., Phys. Rev. Lett. 71, 1860 (1993).Google Scholar
5 Schultz, P. J., Jagadish, C., Ridgway, M. C., Elliman, R. G., Williams, J. S., Phys. Rev. B44, 9118 (1991).Google Scholar
6 Nielsen, B., Holland, O. W., Leung, T. C., Lynn, K. J., J. Appl. Phys. 74, 1636 (1993)Google Scholar
7 Myers, S. M., Nucl. Instr. Meth. 168, 265 (1980).Google Scholar
8 Priolo, F., Poate, J. M., Jacobson, D. C., Batstone, J. L. and Campisano, S. U., Appl. Phys. Lett. 52, 1231 (1988); S. Coffa, J. M. Poate, D. C. Jacobson and F. Priolo, Appl. Phys. A54, 481 (1992 ).Google Scholar
9 Holland, O. W., Fathy, D., Narayan, J. and Oen, O. S., Rad. Eff. 90, 127 (1985).Google Scholar
10 Dennis, J. R. and Hale, E. B., J. Appl. Phys. 49, 1119 (1978)Google Scholar
11 Priolo, F. and Rimini, E., Mater. Sci. Rep. 5, 319 (1990)Google Scholar
12 Im, J. S. and Atwater, H. A., Appl. Phys. Lett. 57, 1766 (1990).Google Scholar
13 Spinella, C., Battaglia, A., Priolo, F. and Campisano, S. U., Europhys. Lett. 16, 313 (1991).Google Scholar
14 Coffa, S., Priolo, F. and Battaglia, A., Phys. Rev. Lett. 70, 3756 (1993).Google Scholar
15 Volkert, C. A., J. Appl. Phys. 70, 3521 (1991).Google Scholar
16 Polk, D. E. and Bodreaux, D. S., Phys. Rev. Lett. 31, 92 (1973).Google Scholar
17 Müller, G. and Kalbitzer, S., Philos. Mag. B38, 241 (1978).Google Scholar
18 Frederickson, J. E., Waddell, C. N., Spitzer, W. G. and Hubler, G. M., Appl. Phys. Lett. 40, 172 (1982).Google Scholar
19 Roorda, S., Sinke, W. C., Poate, J. M., Jacobson, D. C., Dierker, S., Dennis, B. S., Eaglesham, D. J., Spaepen, F. and Fuoss, F., Phys. Rev. B44, 3702 (1991).Google Scholar
20 Battaglia, A., Coffa, S., Priolo, F., Compagnini, G. and Baratta, A., Appl. Phys. Lett. 63, 2204 (1993).Google Scholar
21 Coffa, S., Poate, J. M., Jacobson, D. C., Frank, W. and Gustin, W., Phys. Rev. B45, 8355 (1992).Google Scholar
22 Spitzer, W. G., Huber, G. M. and Kennedy, T. A., Nucl. Instr. Methods B209/210, 309 (1983).Google Scholar
23 van den Hoven, G. N., Liang, Z. N., Nielsen, L. and Custer, J. S., Phys. Rev. Lett. 68, 3714 (1992).Google Scholar
24 Roorda, S., Hakvoort, R. A., van der Veen, A., Stolk, P. A. and Saris, F. W., J. Appl. Phys. 72, 5145 (1992).Google Scholar
25 Mott, N. F. and Davis, E. A., Electronic Processes in Non-Crystalline Materials, Oxford Univ. Press Oxford (1979).Google Scholar
26 Coffa, S., Priolo, F., Glarum, S. H. and Poate, J. M., Nucl. Instr. and Meth. B80/81, 603 (1993).Google Scholar
27 Biersack, J. P. and Haggmark, L. J., Nucl. Instr. and Meth. 174, 257 (1980).Google Scholar
28 Priolo, F., Coffa, S. and Battaglia, A., Nucl. Instr. and Meth. (in press).Google Scholar
29 Müller, G. and LeComber, B. G., Phil. Mag. B43, 419 (1981).Google Scholar