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Ion Beam Mixing of GaAs/AlGaAs Superlattice and ITS Relationship to Amorphization
Published online by Cambridge University Press: 21 February 2011
Abstract
This work is part of a study to understand the process by which energetic ion bombardment can be used to mix the chemical components of AlGaAs and GaAs superlattice (S/I.) layers of nominal 35 to 50Å thickness. Data reported here involve the retention and build-up of collision cascade damage in the S/I. and its relationship to amorphization and chemical mixing in these systems.
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- Copyright © Materials Research Society 1989
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