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Laser Chemical Vapor Deposition Of Tin Films

Published online by Cambridge University Press:  21 February 2011

B. Chen ,
N. Biunno ,
R. K. Singh  and
J. Narayan
B. Chen
Affiliation:
Department of Materials Science and Engineering North Carolina State University Raleigh, NC 27695–7916
N. Biunno
Affiliation:
Department of Materials Science and Engineering North Carolina State University Raleigh, NC 27695–7916
R. K. Singh
Affiliation:
Department of Materials Science and Engineering North Carolina State University Raleigh, NC 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering North Carolina State University Raleigh, NC 27695–7916
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Abstract

We have investigated the pyrolytic deposition of TiN thin films on molybdenum and 304 stainless steel substrates by continuous wave (CW) and pulsed CO2 (λ=10.6 μm) laser radiation. A flow rate of NH3: TiCl4 of 5:1 was maintained during the deposition process. The substrate temperature was controlled by varying the intensity of the incident laser irradiation. The TiN films were characterized by Transmission Electron Microscopy (TEM), Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). TEM results showed that the films were polycrystalline of equiaxed nature with diffraction patterns containing the characteristic TiN rings. The films had a lattice parameter of 4.24Å. AES results showed a slight incorporation of oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 287
Copyright
Copyright © Materials Research Society 1990

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References

1.Xiong, X. and Shizi, L., in proceeding of the 1986 China-Japan Symposium of Thin FilmsGoogle Scholar
2.Wittmer, M., Studer, B., and Mechiar, H., J. Appl. Phys. 52, 5722 (1982)Google Scholar
3.Kumar, N., Fissel, M.G., and Pourrezaei, K., Lee, B., and Douglas, E.C., Thin Solid Films 153, 287–301 (1987)Google Scholar
4.Biunno, N., Narayan, J., Hofmeister, S.K., Srivatsa, A.R., and Singh, R.K., Appl. Phys. Lett. 54. (16) 1519–1521 (1989)Google Scholar
5.Krooshof, G.J.P., Habraken, F.H.P.M., van der Weg, W.F., hove, L.Van den, Maex, K., and DeKeersmaecker, R.F., J. Appl. Phys. 63, 5104–5114 (1988)Google Scholar
6.Allen, S.D., in Physical Processes in Laser-Materials Interactions, edited by Bertolotti, M. (Plenum Press, New York, 1983), pp 455–468Google Scholar
7.Duley, W.W., Laser Processine and Analysis of Materials (Plenum Press, New York, 1983)Google Scholar
8.Pellerin, F., Bodini, C., and Pech, T., J. Vac. Sci. Technol. A 5 (4) 1371–1372 (1987)Google Scholar