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Laser–Recrystallized SOI Devices: Promises and Pitfalls

Published online by Cambridge University Press:  21 February 2011

T I Kamins
T I Kamins*
Affiliation:
Hewlett–Packard Laboratories, Palo Alto Ca 94304
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Abstract

Recrystallized SOI structures offer possibilities for new classes of devices, as well as improved performance of more conventional circuitry. Single-layer and multilayer circuits are possible. For large–geometry devices unseeded films should be satisfactory, but seeding will be required for high–performance, small–geometry circuits. In addition to the quality of the recrystallized film and the substrate, the properties of the interfaces must be optimized. The characteristics of each potential heat source must be considered when selecting one for a specific SOI structure; different sources will be optimum for different applications. The evolution of SOI device structures can be seen by considering different realizations of CMOS cells. SOI structures can be applied to conventional circuits and also should allow efficient integration of entire systems with closely interacting functions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 109
Copyright
Copyright © Materials Research Society 1984

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References

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