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Light-Induced Degradation in Solar Cells with Hydrogenated Amorphous Silicon-Sulfur Active Layers

Published online by Cambridge University Press:  01 February 2011

Wei Xu  and
P. C. Taylor
Wei Xu
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112, U.S.A.
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112, U.S.A.
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Abstract

We have made a series of a-SiSx:H based solar cells, with a pin structure, in a multichamber plasma enhanced chemical vapor deposition (PECVD) system. The sulfur concentration ranges from zero to 5 x 1018 cm-3 as measured by secondary ion mass spectroscopy. The initial conversion efficiencies of cells in this series with sulfur concentrations ≤ 1018 cm-3 are approximately 7%. The time constants for degradation increase with increasing sulfur concentration, but not fast enough to be of practical importance in photovoltaic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A11.4
Copyright
Copyright © Materials Research Society 2002

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