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Low-Contact-Resistance Contacts to Graphene via Metal-Mediated Etching

Published online by Cambridge University Press:  17 July 2013

Wei Sun Leong  and
John T.L. Thong
Wei Sun Leong
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
John T.L. Thong*
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
*
*Email: elettl@nus.edu.sg
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Abstract

The theoretically-predicted enhancement of metal-graphene contacts using the “end-contacted” configuration is studied. Graphene edges at the source/drain regions are created via a CMOS process compatible metal-assisted etching technique. The on-resistance of a graphene device with cobalt-etched-graphene contacts shows 6 times improvement compared to pristine graphene device. Apart from that, four-point contacted graphene devices with nickel-etched-graphene contacts were fabricated and tested under ambient conditions. The proposed graphene devices exhibit contact resistance as low as 14 Ωμm, with an average of 90 Ωμm. Thus, forming metal-etched-graphene contacts is a promising method to obtain low-contact resistance metal contacts to graphene.

Keywords

nanoscaleannealingC
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1553: Symposium T – Electrical Contacts to Nanomaterials and Nanodevices , 2013 , mrss13-1553-t01-02-aa01-02
Copyright
Copyright © Materials Research Society 2013 

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References

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