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Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD

Published online by Cambridge University Press:  01 February 2011

M. Losurdo ,
M.M. Giangregorio ,
M. Luchena ,
P. Capezzuto ,
G. Bruno ,
D. Barreca ,
A. Gasparotto  and
E. Tondello
M. Losurdo
Affiliation:
IMIP-CNR and INSTM, Department of Chemistry, University of Bari, via Orabona, 4–70126, Bari, Italy
M.M. Giangregorio
Affiliation:
IMIP-CNR and INSTM, Department of Chemistry, University of Bari, via Orabona, 4–70126, Bari, Italy
M. Luchena
Affiliation:
IMIP-CNR and INSTM, Department of Chemistry, University of Bari, via Orabona, 4–70126, Bari, Italy
P. Capezzuto
Affiliation:
IMIP-CNR and INSTM, Department of Chemistry, University of Bari, via Orabona, 4–70126, Bari, Italy
G. Bruno
Affiliation:
IMIP-CNR and INSTM, Department of Chemistry, University of Bari, via Orabona, 4–70126, Bari, Italy
D. Barreca
Affiliation:
ISTM-CNR and INSTM, Department of Chemistry, University of Padova, via Marzolo 1, – 35131 Padova, Italy
A. Gasparotto
Affiliation:
ISTM-CNR and INSTM, Department of Chemistry, University of Padova, via Marzolo 1, – 35131 Padova, Italy
E. Tondello
Affiliation:
ISTM-CNR and INSTM, Department of Chemistry, University of Padova, via Marzolo 1, – 35131 Padova, Italy
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Abstract

HfO2 dielectric layers have been grown on p -type Si(100) by plasma enhanced chemical vapor deposition (PE-CVD), using Ar-O2 plasmas and hafnium(IV) tetra-t -butoxide as precursors. In-situ control of the plasma phase is carried out by optical emission spectroscopy (OES) and quadrupolar mass spectrometry (QMS).

Structural and optical properties of the HfO2 layers and of the HfO2/Si interface are investigated by spectroscopic ellipsometry (SE) in the photon energy range 1.5–6.0 eV‥ SE data are corroborated by results obtained from glancing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS).

The effect of the substrate temperature (RT-250°C) and precursor flow on the thickness of interfacial SiO2 layer and on the HfO2 microstructure is investigated. The growth dynamics of HfO2 film and SiO2 interface layer is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E3.15
Copyright
Copyright © Materials Research Society 2004

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References

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