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Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics
Published online by Cambridge University Press: 28 May 2012
Abstract
We demonstrate low operating voltage (<|1.5| V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.
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- Information
- MRS Online Proceedings Library (OPL) , Volume 1451: Symposium DD/EE – Nanocarbon Materials and Devices , 2012 , pp. 179 - 184
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- Copyright © Materials Research Society 2012