Hostname: page-component-7bb8b95d7b-s9k8s Total loading time: 0 Render date: 2024-09-13T09:38:31.359Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescent Holmium Doped Amorphous AlN Thin Films for use as Waveguides and Laser Cavities.

Published online by Cambridge University Press:  01 February 2011

Muhammad Maqbool ,
H. H. Richardson ,
P. G. Van Patten  and
M. E. Kordesch
Muhammad Maqbool
Affiliation:
Department of Physics & Astronomy and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
H. H. Richardson
Affiliation:
Department of Physics & Astronomy and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
P. G. Van Patten
Affiliation:
Department of Physics & Astronomy and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
M. E. Kordesch
Affiliation:
Department of Physics & Astronomy and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
Get access

Abstract

Holmium doped AlN thin films have been deposited on flat silicon substrates and optical fibers of different diameters, in order to fabricate resonant cavities for lasers. In particular, the films on fiber substrates are expected to perform as cylindrical waveguides or “whispering gallery” mode cavities. The AlN films are deposited by reactive sputtering at liquid nitrogen temperature, using 100–200 Watts RF power, 5–8 mTorr nitrogen, using a metal target of Al and Ho. One micron thick films of AlN:Ho have been deposited on flat silicon substrates and 10 micron thick films on 80μm and smaller optical fibers. X-ray Diffraction and SEM studies show that films deposited on flat silicon are amorphous while those deposited on the fibers show columnar growth and some gain structure, most probably due to a temperature rise at the substrate during deposition. Cathodoluminescence (CL) emission is observed in thermally activated AlN:Ho in both crystalline and amorphous forms. An intense, narrow emission peak is observed at 549 nm. Less intense peaks are also observed at 362nm, 394 nm, 461 nm, and 659 nm. The most promising wavelength for our design is emission from the 5S2 → 5I8 transition at 549 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.8
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Caldwell, M. L., Martin, A. L., Dimitrova, V. I., Van Patten, P. G., Kordesch, M. E. and Richardson, H. H., Applied Physics Letters, Vol. 78, 1246–1248, (2001).Google Scholar
2. Dimitrova, V. I., Perjeru, F., Chen, Hong and Kordesch, M. E., Mat. Res. Soc. Symp. Proc. vol. 621, (2000).Google Scholar
3. Wollin, TA, Denstedt, JD., J. Clin. Laser. Med. Surg. 16, 13–20 (1998).Google Scholar
4. Caldwell, M.L., Richardson, H.H. and Kordesch, M.E., MRS Internet Journal Nitride Semiconductor Research 5S1, W3.26 (2000).Google Scholar
5. Steckl, A.J., Birkhahn, R., Appl. Phys. Lett. 73, 1700 (1998).Google Scholar
6. Lozykowski, H.J., Jadwisienczak, W.M., Appl. Phys. Lett. 74, 1129 (1999).Google Scholar
7. Jadwisienczak, W. M., Lozykowski, H. J., Berishev, I., Bensaoula, A., and Brown, I. G., J. Appl. Phys. 89, 4384 (2001).Google Scholar
8. Wilson, R.G., Schwartz, R. N., Abernathy, C. R., Pearton, S. J., Newman, N., Rubin, M., Fu, T., and Zavada, J. M., Appl. Phys. Lett. vol. 65, 22 (1994).Google Scholar
9. Powell, Richard C., “Physics of Solid State Laser Materials”, pp. 340, Springer-Verlag, New York, Inc., 1998.Google Scholar
10. Frolov, S. V., Shkunov, M., and Vardeny, Z. V., Phys. Review B, Vol. 56, R4363–R4366 (1997).Google Scholar