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Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire

Published online by Cambridge University Press:  10 February 2011

P. Fini ,
H. Marchand ,
J. P. Ibbetson ,
B. Moran ,
L. Zhao ,
S. P. Denbaars ,
J. S. Speck  and
U. K. Mishra
P. Fini
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
H. Marchand
Affiliation:
ECE Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
J. P. Ibbetson
Affiliation:
ECE Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
B. Moran
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
L. Zhao
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
S. P. Denbaars
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
J. S. Speck
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
U. K. Mishra
Affiliation:
ECE Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
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Abstract

We demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed 'maskless' LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 μm) GaN layer on sapphire is selectively dry etched, leaving ∼5 μm-wide stripe mesas oriented in the <1010>GaN direction, with a 20 μm period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a ‘T’, or overhang, morphology. As for LEO over an SiO2 mask, significant defect reduction (from ∼109 cm−2 to ∼106 cm−2 ) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle (∼0.4 – 0.5°) is relatively independent of growth temperature and wing aspect ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 315
Copyright
Copyright © Materials Research Society 1999

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References

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