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Material Properties of a SiOC Low Dielectric Constant Film with Extendibility to k < 2.7
Published online by Cambridge University Press: 17 March 2011
Abstract
A plasma deposited SiOC very low k (VLK) interlayer dielectric (ILD) film has been developed which can be tuned to 2.5 = k = 3.0, demonstrates very good thermal stability, excellent adhesion properties, acceptable hardness, and an indication that it may be extendible to k < 2.5. This paper will disclose properties of this SiOC film which are important to a VLK ILD application.
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- Copyright © Materials Research Society 2000
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