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Metal/Porous Silicon Schottky Diode Structures as Sensors

Published online by Cambridge University Press:  01 February 2011

Tayyar Dzhafarov ,
Cigdem Oruc Lus ,
Sureyya AYDIN  and
Emel Cingi
Tayyar Dzhafarov
Affiliation:
caferov@yildiz.edu.trYildiz Technical UniversityPhysicsDavutpasaIstanbul N/A34210Turkey
Cigdem Oruc Lus
Affiliation:
oruc@yildiz.edu.tr, Yildiz Technical University, Physics, Davutpasa, Istanbul, N/A, 34210, Turkey
Sureyya AYDIN
Affiliation:
suaydin@yildiz.edu.tr, Yildiz Technical University, Physics, Davutpasa, Istanbul, N/A, 34210, Turkey
Emel Cingi
Affiliation:
cingi@yildiz.edu.tr, Yildiz Technical University, Physics, Davutpasa, Istanbul, N/A, 34210, Turkey
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Abstract

In this work we present data on investigation of the current-voltage and capacitance characteristics of Au/PS Schottky type structures in the presence of different hydrogen-containing solutions (glucose, ethanol, methanol, boric acid, sodium tetraborate pentahydrate, sodium borohydride, benzine, KOH). Generation of the open-circuit voltage and short-circuit current density and capacitance up to 0.55 V, 25 mA/cm2 and 1μF respectively on placing of Au/PS structures in these solutions was discovered. This effect is mainly caused by hydrogen component of solutions. The possible mechanism generation of voltage and capacitance in metal/PS sensors hydrogen-containing solutions is suggested. The advantage of metal/PS Schottky type sensors consists in working without applying external electricity.

Keywords

diffusionsensorSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 915: Symposium R – Nanostructured Materials and Hybrid Composites for Gas Sensors and Biomedical Applications , 2006 , 0915-R06-13
Copyright
Copyright © Materials Research Society 2006

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References

[1] Baratto, C., Faglia, G., Comini, E., Sberveglieri, G., Taroni, A., Ferrara, V. La, Quereia, L., Francia, G. Di, Sens. Actuators B: Chem. 77, 62 (2001).Google Scholar
[2] Watanabe, K., Okada, T., Choe, I., Sato, Y., Sens. Actuators B: Chem. 33, 194 (1996).Google Scholar
[3] Stievenard, D., Deresmes, D., Appl. Phys. Lett. 67, 1570 (1995).Google Scholar
[4] Das, J., Hossan, S.M., Chakraborty, S., Saha, H., Sens. Actuators, A 94, 44 (2001).Google Scholar
[5] Foucaran, A., Pascal-Delannay, F., Grani, A., Sackda, A., Combette, P., Boyer, A., Thin Solid Films, 297, 317 (1997).Google Scholar
[6] Watanabe, K., Okada, T., Choe, I., Satoh, Y., “Proc. of the Transducers” 95, Stockholm, Sweden, June 1995.Google Scholar
[7] Dzhafarov, T.D., Can, B., Allahverdiev, Z.A., Surface Science, 482–485, 1141 (2001).Google Scholar
[8] Dzhafarov, T.D., Can, B., Oruc, C., Allahverdiev, Z.A., J. Phys.D: Appl. Phys. 35, 3122 (2002).Google Scholar
[9] Dzhafarov, T.D., Oruc, C., Aydin, S., J. Phys. D: Appl. Phys. 37, 404 (2004).Google Scholar
[10] Ceraolo, M., Miulli, C., Pozio, A., J. Power Sources, 13, 131 (2003).Google Scholar
[11] Hua, D., Hanxi, Y., Xinping, A., Chuansin, C., Intern. J. Hydrogen Energy, 28, 1095 (2003).Google Scholar