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Microscopic Analysis of the Behavior of Interstitial and Precipitated Oxygen During Intrinsic Gettering in Si
Published online by Cambridge University Press: 26 February 2011
Abstract
We have used FTIR spectrum processing to analyze the behavior of interstitial and precipitated oxygen during the intrinsic gettering process. The kinetics of precipitation and the microscopic growth characteristics of precipitates were compared with a theoretical model based on diffusion controlled precipitation process. The annealing time dependence of precipitate size has been found to follow the relation of r = tn with n = 0.7.
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- Copyright © Materials Research Society 1988
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