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Microstructural and Thermoelectric Properties of P-Type Te–Doped Bi0.5Sb1.5Te3 And N-Type SbI3-Doped Bi2Te2.85Se0.15 Compounds

Published online by Cambridge University Press:  15 February 2011

J. Seo ,
K. Park ,
C. Lee  and
J. Kim
J. Seo
Affiliation:
Department of Metallurgical Engineering, Inha University, Inchon 402–751, Korea
K. Park
Affiliation:
Department of Materials Engineering, Chung-ju National University, Chungju, Chungbuk 380–702, Korea
C. Lee
Affiliation:
Department of Metallurgical Engineering, Inha University, Inchon 402–751, Korea
J. Kim
Affiliation:
Advanced Manufacturing Processing Division, Korea Academy of Industrial Technology, Siheung, Kyunggi-do 429–450, Korea
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Abstract

The p-type Te-doped Bi0.5Sb1.5Te3 and n-type SbI3-doped Bi2Te2.85Se0.15 thermoelectric compounds were fabricated by hot pressing in the temperature range of 380 to 440 °C under 200 MPa in Ar. Both the compounds were highly dense and showed high crystalline quality. The grains of the compounds were preferentially oriented and contained many dislocations through the hot pressing. The fracture path followed the transgranular cleavage planes, which are perpendicular to the c-axis. In addition, with increasing the pressing temperature, the figure of merit was increased. The highest values of figure of merit for the p- and n-type compounds, which were obtained at 420 °C, were 2.69 × 10−3/K and 2.35×10−3/K, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 478: Symposium Q – Thermoelectric Materials - New Directions and Approaches , 1997 , 127
Copyright
Copyright © Materials Research Society 1997

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References

1. Wyckoff, R. W. G., Crystal Structure, Vol.2, Interscience Publishers, New York, 1964.Google Scholar
2. Weise, J. R. and Muller, L., J. Phys. Chem. Solids 15, 13 (1960).Google Scholar
3. Fleurial, J. P., Gailliard, L., Triboulet, R., Scherrer, H., and Scherrer, S., J. Phys. Chem. Solids 49, 1237 (1988).Google Scholar
4. Uemura, K. and Nishida, I., Thermoelectric Semiconductors and Their Application, Nikkan-Kogyo Shinbun Press, Tokyo, Japan, 1988.Google Scholar