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Modeling Interdiffusion in Superlattice Structures
Published online by Cambridge University Press: 10 February 2011
Abstract
Compositional interdiffusion in Al0.3 Ga0.7 As/GaAs superlattices induced by Si focused ion beam implantation and subsequent rapid thermal annealing is modeled using a set of diffusion equations which take into account the dynamics of the vacancy spatial profile. The inclusion of a new phenomenological term, which depends on the time derivative of the vacancy concentration spatial profile, provides good agreeement with experiment.
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- Copyright © Materials Research Society 1998