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Modeling of PVT Growth of Bulk SiC Crystals: General Trends and 2” to 4” Reactor Scaling
Published online by Cambridge University Press: 10 February 2011
Abstract
We report on study of a growth system upscaling from 2” to 4” using numerical modeling. The model applied involves heat and mass transfer computations combined with a self-consistent analysis of deposit formation on the reactor walls. General trends in SiC bulk crystal growth originated from upscaling are discussed in detail.
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- Copyright © Materials Research Society 2000
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