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Modeling of the Surface Annihilation of Excess Self-Interstitials Generated by Gold Diffusion into Silicon

Published online by Cambridge University Press:  10 February 2011

N. A. Stolwijk ,
W. Lerch  and
A. Giese
N. A. Stolwijk
Affiliation:
Institut für Metallforschung, Universität Münster, D-48149 Münster, Germany, stolwij@nwz.uni-muenster.de
W. Lerch
Affiliation:
Institut für Metallforschung, Universität Münster, D-48149 Münster, Germany, stolwij@nwz.uni-muenster.de STEAG AST Elektronik GmbH, Daimlerstrasse 10, D-89160 Dornstadt, Germany
A. Giese
Affiliation:
Institut für Metallforschung, Universität Münster, D-48149 Münster, Germany, stolwij@nwz.uni-muenster.de
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Abstract

Based on the kick-out mechanism, we have modeled the time evolution of the Si self-interstitial supersaturation during gold diffusion from evaporated surface layers into silicon substrates. The model comprises a limited annihilation velocity υI of self-interstitials at the Si surface, which accounts for the gradual increase of the Au boundary concentration observed during rapid thermal annealing at higher temperatures and furnace annealing at lower temperatures. Experimental data were fitted by computer simulation of the Au diffusion process. An approximate analytical expression describing the increase of the Au boundary concentration with time is also given. We obtain υI 1.35 × 1011 exp(−3.91 eV/kBT) ms-1 for gold-covered {100}-oriented Si surfaces between 845 °C and 1119 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 111
Copyright
Copyright © Materials Research Society 1998

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References

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