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Modelling and Characterization of Submicron P-Channel MOSFET's Locally Degraded by Hot Carrier Injection
Published online by Cambridge University Press: 15 February 2011
Abstract
The influence of the localized defective channel region formed by hot carrier injection on the basic characteristics of P-channel transistors is systematically investigated and modeled. A practical method of parameter extraction in stressed P-MOSFET's is proposed. It is based on the comparison of Ids(Vg) characteristics before and after stress in weak and strong inversion.
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- Copyright © Materials Research Society 1991
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