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Multi-Hundred Gigahertz Photodetector Development Using LT GaAs
Published online by Cambridge University Press: 15 February 2011
Abstract
We report on the development of a new, integrable photoconductive-type detector based on low-temperature-grown GaAs. The detector has a response time of 1.2 ps and a 3-dB bandwidth of 375 GHz. The responsivity is 0.1 A/W. This is the fastest photodetector reported to date. We discuss the unique properties of this device, including its performance as functions of both light intensity and bias voltage.
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- Copyright © Materials Research Society 1992