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&[mu]-Watt Enhanced Electroluminescent Power of Silicon Nanocrystal Light-Emitting Diodes Made on Nano-Scale Silicon-Tip-Array Substrate

Published online by Cambridge University Press:  01 February 2011

Gong-Ru Lin  and
Chun-Jung Lin
Gong-Ru Lin
Affiliation:
grlin@ntu.edu.tw, Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan, 886-2-33663700 ext 235, 886-2-33669598
Chun-Jung Lin
Affiliation:
knoxlin.eo91g@nctu.edu.tw, National Chiao Tung University, Department of Photonics and Institute of Electro-Optical Engineering, No. 1001, Ta Hsueh Road, Hsinchu, 300, Taiwan
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Abstract

A Si nanocrystal based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nano-pillar array is preliminarily demonstrated. Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is employed as the etching mask for obtaining Si nano-pillar array. Dense Ni nanodots with size and density of 30 nm and 2.8×10 cm-2, respectively, can be formatted after rapid thermal annealing at 850°C for 22 s. The nano-roughened Si surface contributes to both the relaxation of total-internal reflection at device-air interface and the Fowler-Nordheim tunneling enhanced turn-on characteristics, providing the MOSLED a maximum optical power of 0.7 uW obtained at biased current of 375 uA. The optical intensity, turn-on current, power slope and external quantum efficiency of the MOSLED are 140 μW/cm2, 5 uA, 2+-0.8 mW/A and 1×10-3, respectively, which is almost one order of magnitude larger than that of a same device made on smooth Si substrate.

Keywords

luminescenceSichemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A10-05
Copyright
Copyright © Materials Research Society 2007

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