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Nanoporous Silica Films Derived from Structural Controllable Poly(silsesquioxane) Oligomers by Templating

Published online by Cambridge University Press:  01 February 2011

Wei-Chih Liu
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan 106
Yang-Yen Yu
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan 106
Wen-Chang Chen
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan 106 Institute of Polymer Science and Engineering, National Taiwan University, Taipei, Taiwan 106
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Abstract

In this study, nanoporous silica films were prepared from the poly(hydrogen silsesquioxane)(HSSQ) and a templating agent. Three different kinds of the HSSQ with different molecular weight and Si-OH end group content were prepared through the variation of the water/triethoxysilane ratio or pH. The templaing agent for generating nanopore was triphenylsilanol (TPS). The experimental results of refractive index, dielectric constant, and FE-SEM supported the formation of the nano-size pores in the prepared silica films. The dielectric constant of the prepared nanoporous thin films could be reduced form 2.89 (porosity: 12%) to 1.85 (porosity: 58%) by increasing the added TPS. The surface roughness of the prepared nanoporous silica film in comparison with the film thickness was less than 1%. For successful generating small and uniform nanopore in the film, low molecular weight or high Si-OH content of the prepared HSSQ would be required. The current approach is useful for preparing new kinds of low dielectric constant materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

1. Albrecht, M. G. and Blanchette, C., J. Electrochem. Soc. 145, 4019 (1998).Google Scholar
2. Loboda, M. J., Grove, C. M. and Schneider, R. F., J. Electrochem. Soc. 145, 2861 (1998).Google Scholar
3. Liou, H. C. and Pretzer, J., Thin Solid Films 335, 186 (1998).Google Scholar
4. Cook, F. and Liniger, E. G., J. Electrochem. Soc. 146, 4439 (1999).Google Scholar
5. Yang, C. C., Chen, W. C., Chen, L. M., and Wang, C. J., Proc. Nsc. ROC. A. 339 (2001).Google Scholar
6. Yang, C. C. and Chen, W. C., J. Mater. Chem. 12, 1138 (2002).Google Scholar
7. Lee, L. H., Chen, W. C., and Liu, W.C., J. Polym. Sci. Polym. Chem. 40, 1560 (2002).Google Scholar
8. Aoi, N., Jpn. J. Appl. Phys. 36, 1355 (1997).Google Scholar
9. Yang, S., Mirau, P. A., Pai, C.S., Nalamasu, O., Reichamnis, E., Pai, J. C., Obeng, Y. S., Seputro, J., Lin, E. K., Lee, H.J., Sun, J., Gidley, D. W., Chem. Mater. 14, 369 (2002).Google Scholar
10. Lee, H.J., Lin, E. K., Wang, H., Wu, W.L., Chen, W., and Moyer, E. S., Chem. Mater. 14, 1845 (2002).Google Scholar
11. Yang, C. C., Wu, P. T., and Chen, W. C., unpublished results.Google Scholar