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Near-Infrared Photodetection with Molecular Beam Epitaxy Grown Extended InGaAs
Published online by Cambridge University Press: 01 February 2011
Abstract
Strain-balanced InxGa1-xAs/InyGa1-yAs superlattices and fractional monolayer In0.532Ga0.468As/InAs superlattices were grown by solid-source molecular beam epitaxy (SSMBE) in order to extend the photodetection wavelength range beyond 1.7μm. Material qualities were characterized by transmitted electron microscope (TEM), X-ray diffraction (XRD), roomtemperature photoluminesecence (RTPL) and optical absorption measurement.
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- Copyright © Materials Research Society 2005