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A New Method for Measuring Ion Implantation Amorphous Dose In Situ
Published online by Cambridge University Press: 28 February 2011
Abstract
An in situ method for determining the ion implantation dose necessary to make Si amorphous is developed and utilized. This method is based on measuring ion-implantation-induced in-plane stress. Measurements are carried out for various low energy ions implanted into thin p-type (100) Si. The doses necessary to make Si amorphous obtained by this method are in good agreement with previous data. This technique is sensitive, informative, quick, visual and nondestructive.
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- Copyright © Materials Research Society 1992
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