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Nitrogen-Oxygen Complexes in Silicon

Published online by Cambridge University Press:  26 February 2011

Masashi Suezawa  and
Koji Sumino
Masashi Suezawa
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
Koji Sumino
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
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Abstract

Several series of optical absorption lines are found in the wavenumber range 190–270 1/cm in as-grown crytals of n-type Si involving oxygen and nitrogen simultaneously. They are related to the electronic transitions associated with five kinds of shallow donors each consisting of nitrogen and oxygen atoms (N-O complex). The analysis of the generation kinetics shows that the complex of the main type consists of one oxygen atom and two or three pairs of nitrogen atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 193
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Kaiser, W., Frisch, H.L., and Reiss, H., Phys. Rev. 112, 1546 (1958).Google Scholar
2.Kanamori, A. and Kanamori, M., J. Appl. Phys. 50, 8095 (1979).Google Scholar
3.Tokumaru, Y., Okushi, H., Masui, T., and Abe, T., Jpn. J. Appl. Phys. 21, L443 (1982).Google Scholar
4.Suezawa, M., Sumino, K., Harada, H., and Abe, T., Jpn. J. Appl. Phys. 25, L859 (1986); M. Suezawa, K. Sumino, H. Harada, and T. Abe, Jpn. J. Appl. Phys., 27, in press (1988).Google Scholar
5.Ito, Y., Nozaki, T., Masui, T., and Abe, T., Appl. Phys. Lett. 47, 488 (1985).Google Scholar
6.lizuka, T., Takasu, S., Tajima, M., Arai, T., Nozaki, T., Inoue, N., and Watanabe, M., J. Electrochem. Soc. 132, 1707 (1987).Google Scholar
7.Faulkner, R.K., Phys. Rev. 184, 713 (1969).Google Scholar
8.Stein, H.J., in Defects in Semiconductors, edited by Kimerling, L.C. and Parsey, J.M. (The Metallurgical Soc. AIME, Warrendale, 1984), p. 839.Google Scholar