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Non-Contact Characterization of Recombination Processes in 4H-SiC
Published online by Cambridge University Press: 15 March 2011
Abstract
Carrier decay transients in 4H-SiC n-type and p-type epilayers have been charac-terized using a non-destructive, non-contact microwave photoconductivity technique. Decay transients show a two-stage exponential decay with first decay constants as high as 400 ns in 10 νm p-type epilayers. The second decay constant increases with temperature and is dominated by interface recombination.
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- Copyright © Materials Research Society 2000
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