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Non-Equilibrium InSb/InAISb Diodes Grown by MBE

Published online by Cambridge University Press:  10 February 2011

A D Johnson ,
A B J Smout ,
J W Cairns ,
G J Pryce ,
A J Pidduck ,
R Jefferies ,
T Ashley  and
C T Elliott
A D Johnson
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, UKadjohnson@dera.gov.uk
A B J Smout
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, UKadjohnson@dera.gov.uk
J W Cairns
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, UKadjohnson@dera.gov.uk
G J Pryce
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, UKadjohnson@dera.gov.uk
A J Pidduck
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, UKadjohnson@dera.gov.uk
R Jefferies
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, UKadjohnson@dera.gov.uk
T Ashley
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, UKadjohnson@dera.gov.uk
C T Elliott
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, UKadjohnson@dera.gov.uk
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Abstract

The application of non-equilibrium transport techniques to Molecular Beam Epitaxy (MBE) grown InSb/InAlSb heterostructure diodes has produced practical devices such as midinfrared LED's and negative luminescent sources that operate at room temperature. By extending the epitaxial growth to vicinal InSb substrates it has been demonstrated that the temperature window for high quality epitaxy can be lowered by ∼12°C, giving greatly improved epilayer morphology. The degree of misorientation needed for given growth temperatures is shown from Atomic Force Microscope (AFM) measurements to be only ∼2°. In addition, the lower growth temperature gives improved dopant activation, lower trap densities and lower reverse bias leakage currents, with consequent benefits to device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 143
Copyright
Copyright © Materials Research Society 1998

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