Hostname: page-component-7479d7b7d-m9pkr Total loading time: 0 Render date: 2024-07-13T01:48:06.088Z Has data issue: false hasContentIssue false
  • English
  • Français

A Novel Approach to Semiconductor Electrical Properties - The Advanced Method of Transient Microwave Photoconductivity (AMTMP)

Published online by Cambridge University Press:  10 February 2011

S. Grabtchak  and
M. Cocivera
S. Grabtchak
Affiliation:
Guelph-Waterloo Centre for Graduate Work in Chemistry, University of Guelph, Guelph, Ontario, Canada NIG 2W1
M. Cocivera
Affiliation:
Guelph-Waterloo Centre for Graduate Work in Chemistry, University of Guelph, Guelph, Ontario, Canada NIG 2W1
Get access

Abstract

The advanced method of transient microwave photoconductivity (AMTMP) represents a new method based on cavity perturbation theory, microwave photoconductivity and harmonic oscillator model analysis. AMTMP provides a direct observation of changes to the complex dielectric constant, and free and trapped electron decays can be studied separately. The results obtained for polycrystalline CdSe thin films clearly indicate that a multiple trapping model developed for amorphous materials does not provide a satisfactory description. For SI GaAs the harmonic oscillator model provides a quantitative interpretation. The limitations are discussed for the application of this method to porous Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 57
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Slater, J.C., Rev. Mod. Phys., 18, p. 441 (1946)Google Scholar
2. Hutcheon, R., de Jong, M., and Adams, F., J. Microw. Pow. Electromagn. En., 27, p. 87 (1992)Google Scholar
3. Chen, M. C., J. Appl. Phys. 64, p. 945 (1988)Google Scholar
4. Damaskinos, S., Dixon, A. E., Roberts, G. D., and Dagg, I. R., J. Appl. Phys. 60, p. 1681 (1986)Google Scholar
5. Wang, M. S. and Borrego, J. M., J. Electrochem. Soc., 137, p. 3648 (1990)Google Scholar
6. Grabtchak, S. Yu. and Cocivera, M., Phys. Rev. B, 50, p. 18219 (1994)Google Scholar
7. Grabtchak, S. and Cocivera, M., Progr. Surf. Sci., 50 (1–4), p. 305 (1995)Google Scholar
8. Grabtchak, S. Yu. and Cocivera, M., J. Appl. Phys., 79, p. 786 (1996)Google Scholar
9. Grabtchak, S. and Cocivera, M., Phys. Rev. B, 58, iss. 7 (1998)Google Scholar
10. Hartwig, W. H. and Hinds, J. J., J. Appl. Phys., 40, p. 2020 (1969)Google Scholar
11. Hinds, J. J. and Hartwig, W. H., J. Appl. Phys., 42, p. 170 (1971)Google Scholar
12. Buravov, L. J. and Shchegolev, I. F., Prib. Tek. Eksp., 2, p. 171 (1971)Google Scholar
13. Ibach, H. and Luth, H., Solid State Phvsics. 2nd edition, Springer-Verlag, Berlin 1995, p. 292 Google Scholar
14. Jonscher, A. K., Dielectric Relaxation in Solids. Chelsea Dielectrics Press, London, 1983, Chapter 4.Google Scholar
15. Benedict, T.S. and Shockley, W., Phys. Rev., 89, p. 1152 (1953)Google Scholar
16. Glezer, E. N., Siegel, Y., Huang, L., and Mazur, E., Phys. Rev. B, 51, p. 6959 (1995)Google Scholar
17. Dresselhaus, G., Kip, A. F., and Kittel, C., Phys. Rev. 100, p. 618 (1955)Google Scholar
18. Weng, S. and Cocivera, M., J. Electrochem. Soc., 139, p. 3220 (1992)Google Scholar
19. Orenstein, J., Kastner, M. A., and Vaninov, V., Philos. Mag. B, 46, p. 23 (1982)Google Scholar
20. Taue, J. in Semiconductors and Semimetals, ed. by Pankove, J. I., Academic Press, Orlando, 1984, 21 B, Chapter 9.Google Scholar
21. Pfister, G. and Sher, H., Phys. Rev. B, 15, p. 2062 (1977)Google Scholar
22. Marshall, J. M., Michiel, H., and Adriaenssens, G. J., Philos. Mag. B, 47, p. 211 (1983)Google Scholar
23. Ramirez-Bon, R., Sanchez-Sinencio, F., Gonzales de la Cruz, G., and Zelaya, O., Phys. Rev. B, 48, p. 2200(1993)Google Scholar
24. Qiu, C. H., Melton, W., Leksono, M. W., Pankove, J. I., Keller, B. P., and DenBaars, S. P., Appl. phys. Lett., 69, p. 1282 (1996)Google Scholar
25. von Behren, J., Fauchet, P. M., Chimowitz, E. M. and Lira, C. T., Mat. Res. Soc. Proc. 452, p. 565 (1997)Google Scholar