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A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation

Published online by Cambridge University Press:  15 February 2011

C-M Park ,
M-C Lee ,
J-H Jeon  and
M-K Han
C-M Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
M-C Lee
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
J-H Jeon
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
M-K Han
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, mkh@emlab.snu.ac.kr, phone: +82-2-880-7992, fax: +82-2-875-7372
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Abstract

Excimer laser annealing technique is proposed to increase the grain size and controlling the microstructure of polycrystalline silicon (poly-Si) thin film. Our method is based on the lateral grain growth during laser annealing. Our specific grid ion beam irradiation method was designed to maximize the lateral growth effect and arrange the location of grain boundaries. We observed well-arranged poly-Si grains up to micrometer order by transmission electron microscopy (TEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 171
Copyright
Copyright © Materials Research Society 1999

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References

1) Proano, R. E., Misage, R. S. and Ast, D. G., IEEE Trans. Electron Devices ED–36, 1915 (1989).Google Scholar
2) Serikawa, T., Shirai, S., Okamoto, A. and Suyama, S., IEEE Trans. Electron Devices ED–36, 1929 (1989).Google Scholar
3) Watanabe, H., Miki, H., Sugai, S., Kawasaki, K. and Kioka, T., Jpn. J. Appl. Phys. 33, 4491 (1994).Google Scholar
4) Kodama, N., Tanabe, H., Sera, K., Hamada, K., Saitoh, S., Okumura, F. and Ikeda, K., Solid State Devices and Materials, 431, (1993)Google Scholar
5) Kim, H. J. and Im, J. S., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar
6) Yamaoka, T., Oyoshi, K., Tagami, T., Arima, Y., Yamashita, K. and Tanaka, S., Appl. Phys. Lett. 57, 1970 (1990).Google Scholar
7) Song, H. J. and Im, J. S., Appl. Phys. Lett. 68, 3165 (1996).Google Scholar