Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-17T13:53:21.436Z Has data issue: false hasContentIssue false

On The Optimized Nucleation of Near-Single-Crystal Cvd Diamond Film

Published online by Cambridge University Press:  10 February 2011

L. C. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
C. C. Juan
Affiliation:
Department of Chemical Engineering, National Taiwan Institute of Technology, Taipei, Taiwan
J. Y. Wu
Affiliation:
Physics Department, National Sun-Yat-Sen University, Kaohsiung, Taiwan
K. H. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
J. W. Teng
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
Get access

Abstract

Near-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The timedependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yugo, S., Kanai, T., Kimura, T., and Muto, T., Appl. Phys. Lett. 58, 1036 (1991).Google Scholar
2. Stoner, B. R., Ma, G.-H. M., Wolter, S. D., and Glass, J. T., Phys. Rev. B 45, 11067 (1992).Google Scholar
3. Stoner, B. R. and Glass, J. T., Appl. Phys. Lett. 60, 698 (1992).Google Scholar
4. Wolter, S. D., Stoner, B. R., Glass, J. T., Ellis, P. J., Buhaenko, D. S., Jenkins, C. E., and Southworth, P., Appl. Phys. Lett. 62, 1215 (1993).Google Scholar
5. Jiang, X., Klages, C.-P., Zachai, R., Hartweg, M., and Fusser, H.-J., Appl. Phys. Lett. 62, 3438 (1993).Google Scholar
6. Kohl, R., Wild, C., Herres, N., Koidl, P., Stoner, B. R., and Glass, J. T., Appl. Phys. Lett. 63, 1792 (1993).Google Scholar
7. Kawarada, H., Suesada, T., Nagasawa, H., Appl. Phys. Lett. 66, 583 (1995).Google Scholar
8. Chen, F. R., Chen, C. J., Chang, L., and Lin, T. S., Diamond and Rel. Mat. (in press).Google Scholar
9. Clausing, R. E., Heatherly, L., Specht, E. D., and Moore, K. L. in New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J. E., and Roy, R. (Mater. Res. Soc. Symp. Int. Proc. NDST-2, Pittsburgh, PA, 1991) p. 575.Google Scholar
10. Wild, C., Muller-Sebert, W., Eckermann, T., and Koidl, P., Electrochem. Soc. Proc. 91–8, 224 (1991).Google Scholar
11. Wild, C., Koidl, P., Herres, N., Muller-Sebert, W., and Eckermann, T., presented at the 2nd Int. Conf. on Diamond Materials, ECS Spring Meeting, Washington, DC, May 1991.Google Scholar
12. Stoner, B. R., Williams, B. E., Wolter, S. D., Nishimura, K., and Glass, J. T., J Mater. Res. 7, 257 (1992).Google Scholar
13. Stoner, B. R., Glass, J. T., Hooke, W. M., Williams, B. E., Patent WO 93/13242 (1993).Google Scholar