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On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

Published online by Cambridge University Press:  22 February 2011

Mark S. Rodder  and
Dimitri A. Antoniadis
Mark S. Rodder
Affiliation:
Texas Instruments Inc., Dallas, TX 75265
Dimitri A. Antoniadis
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

It is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 77
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Lu, N.C.C., Gerzberg, L., Lu, C.Y., and Meindl, J.D., IEEE Trans. on Elec. Dev. ED–30, 137 (1983).Google Scholar
2. Mayadas, A.F. and Shatzkes, M., Phys. Rev. B 1, 1382 (1970).Google Scholar
3. Kim, D.M., Khondker, A.N., Ahmed, S.S., and Shah, R.R., IEEE Trans. on Elec. Dev. ED–31, 480 (1984).Google Scholar
4. Bethe, H.A., MIT Radiat. Lab. Rep. 43, 12 (1942).Google Scholar
5. Shewchun, J., Waxman, A., and Warfield, G., Solid St. Elec. 10, 1165 (1967).Google Scholar
6. Lee, P., private communication.Google Scholar
7. de Groot, A.W. and Card, H.C., IEEE Trans. on Elec. Dev. ED–31, 1370 (1984).Google Scholar
8. Werner, J., in Polycrystalline Semiconductors, edited by Harbeke, G. (Springer-Verldg Publishers, New York, 1985), p. 76.CrossRefGoogle Scholar
9. Lu, N.C.C., Gerzberg, L., Lu, C.Y., and Meindl, J.D., IEEE Trans. on Elec. Dev. ED–28, 818 (1981).Google Scholar