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Optical Phenomena at the Absorption Edge of Crystalline and Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

George D. Cody
George D. Cody*
Affiliation:
Exxon Corporate Research Laboratory, Annandale, New Jersey, 08840, USA
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Abstract

Optical phenomena associated with the absorption edge of crystalline silicon (c-Si) and amorphous silicon hydride (a-Si:H) are presented and compared. The optical properties discussed include the energy dependence, dipole matrix element and density of states associated with the absorption edge; the temperature dependence of the relevant optical energy gaps, and finally the magnitude and temperature dependence of the slope of the Urbach edge for each material. The comparison suggests that the optical properties of the two materials are closely related and that the absorption edge of a-Si:H may be derived from the effect of site disorder on the zone center direct gap of c-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 113
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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