Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-19T10:24:22.585Z Has data issue: false hasContentIssue false

Optimized Materials Properties for Organosilicate Glasses Produced by Plasma-Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

M.L. O'Neill
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA 18195
R.N. Vrtis
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA 18195
J.L. Vincent
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA 18195
A.S. Lukas
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA 18195
E.J. Karwacki
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA 18195
B.K. Peterson
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA 18195
M.D. Bitner
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA 18195
Get access

Abstract

In this paper we examine the relationship between precursor structure and material properties for films produced from several leading organosilicon precursors on a common processing platform. Results from our study indicate that for the precursors tested the nature of the precursor has little effect upon film composition but significant impact on film structure and properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hay, J., General Procedure for Determining Hardness and Elastic Modulus on Low Dielectric-Constant Coatings on Silicon Wafers, MTS Nano Instruments Protocol Google Scholar
2. Yasuda, H., Plasma Polymerization. 1985, Academic Press.Google Scholar
3. Wu, G., Gleason, K.K., Plasma-Enhanced Chemical Vapor Deposition of Low k Dielectric Films using Methylsilane, Dimethylsilane, and Trimethylsilane Precursors. J. Vac. Sci., A 21(2)Google Scholar
4. MacWilliams, K., et al., Low k Material Optimization. IEEE Proc., 2001: p. 203205.Google Scholar
5. Sugahara, S. et al, Preparation and Characterization of Low-k silica Film Incorporated with Methylene Groups, J. Electrochemical Soc., 148(6), 2001, F120126.Google Scholar
6. Grill, A., Edelstein, D., Patel, V., SiCOH Dielectrics: From Low-k to Ultralow-k by PECVD, Advanced Metalization Conference 2001, p. 253259.Google Scholar
7. O'Neill, M.L., et al, Low k Materials by Design, Semiconductor International, June 2002, p. 93.Google Scholar