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PE-CVD of F-Doped SiO2 Thin Films Using Tetraisocyanatesilane and Tetrafluorosilane

Published online by Cambridge University Press:  15 February 2011

T. Shirafuji ,
M. Sawada ,
Y. Nakagami ,
Y. Hayashi  and
S. Nishino
T. Shirafuji
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
M. Sawada
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
Y. Nakagami
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
Y. Hayashi
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
S. Nishino
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
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Abstract

SiO2 films have been prepared from tetraisocyanatesilane (TICS, Si(NCO)4) by using a conventional capacitively coupled RF(13.56MHz) plasma-enhanced CVD method. The films show poor water resistivity, which originates in inclusion of NCO in the films. This has been improved by mixing O2 to the source gas. SiO:F films have been prepared by mixing SiF4. The film with F concentration of 6at.% has shown dielectric constant of 3.3, resistivity of 3.6×1015Ωcm at 1MV/cm and break-down electric field of 7.7MV/cm. Infrared spectrum of the film have contained no noticeable OH peak even after exposing to the air for 2 weeks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 137
Copyright
Copyright © Materials Research Society 1997

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References

1. Fukada, T. and Akahori, T., Extended Abstracts of Int. Conf. on Solid State Devices and Materials, p. 158 (1993).Google Scholar
2. Homma, T., Thin Solid Films 278, 28 (1996).Google Scholar
3. Hayasaka, N., Miyajima, H., Nakasaki, Y., Katsumata, R., Extended Abstracts of Int. Conf. on Solid State Devices and Materials, p. 157 (1995).Google Scholar
4. Katsumata, R., Miyajima, H., Nakasaki, Y., Hayasaka, N., Proc. 17th Dry Process Symp., p.269 (1995).Google Scholar
5. Hayasaka, N., Nishijima, Y., Miyajima, H., Tomioka, K., Nakata, R., Okano, H., Proc. 15th Dry Process Symp., p. 163 (1993).Google Scholar
6. Miyajima, H., Katsumata, R., Hayasaka, N., Okano, H., Proc. 16th Dry Process Symp., p.133 (1994).Google Scholar
7. Sawada, M., Shirafuji, T., Hayashi, Y., Tech. Rep. IEICE SDM 95–179, 35 (1995).[in Japanese]Google Scholar
8. Shirafuji, T., Sawada, M., Hayashi, Y., Proc. 13th Symp. Plasma Processing, p. 121 (1996).Google Scholar
9. Morishita, S., Gasser, W., Usami, K., Matsumura, M., J. Non-Cryst. Solids 187, 66 (1995).Google Scholar
10. Miller, F. A., Carlson, G. L., Spectrochimica Acta. 17, 977 (1967).Google Scholar
11. Taniguchi, H., Sugiura, O., Jpn. J. Appl. Phys. 33, L1485 (1994).Google Scholar
12. Pai, C.S., Chang, C.-P., J. Appl. Phys. 68, 793 (1990).Google Scholar
13. Takahashi, K., Tachibana, K., Trans. IEE Jpn. 111-A, 3 (1991).[in Japanese]Google Scholar
14. Tachibana, K., Phys. Rev. A 34, 1007 (1986).Google Scholar
15. Sugiura, O., (Private Communication).Google Scholar
16. Idris, I., Sugiura, O., Jpn. J. Appl. Phys. 34, L772 (1995).Google Scholar
17. Sze, S. M., Physics of Semiconductor Devices 2nd Ed. (Wiley, New York, 1981) pp. 402–407.Google Scholar