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Photoluminescence Measurements in Interband Transition in Fast Neutron Irradiated In0.07Ga0.93As/A10.4Ga0.6 As Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

M. O. Manasreh  and
S. Subramanian
M. O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131-1356. E-Mail: manasreo@plk.af.mil
S. Subramanian
Affiliation:
Department of Electrical and Computer Engineering, Oregon State University, Corvallis, OR 97331.
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Abstract

Interband transitions in n-type InGaAs/AlGaAs multiple quantum wells were studied using a photoluminescence (PL) technique after the samples were irradiated with fast neutrons. It was observed that the PL intensity of the interband transition is reduced as the irradiation dose is increased. In Addition, the peak position energy of the interband transition was increased and then decreased as a function of irradiation dose. The results are explained in terms of electrons trapping, many-body effects, and irradiation-induced damages at the interfaces as well as in the well and barrier regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 525
Copyright
Copyright © Materials Research Society 2000

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