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Picosecond Time-Resolved Amorphization Velocities in Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
Transient time-resolved picosecond reflectivity measurements were performed on silicon melted by a 40 ps ultraviolet (308 nm) beam. These were compared to simulations of reflectivity versus amorphous and liquid layer depth and of amorphous interface velocity for various models including transition state theory and density limited growth, both with and without thermal activation.
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- Copyright © Materials Research Society 1992