Hostname: page-component-7bb8b95d7b-5mhkq Total loading time: 0 Render date: 2024-09-18T16:15:59.259Z Has data issue: false hasContentIssue false

Plasma-Activated Ion Beam Reactive Sputtering of NbN Thin Films*

Published online by Cambridge University Press:  25 February 2011

D. J. Lichtenwalner
Affiliation:
MIT Lincoln Laboratory, Lexington MA 02173 MIT Department of Materials Science and Engineering, Cambridge MA 02139
Alfredo C. Anderson
Affiliation:
MIT Lincoln Laboratory, Lexington MA 02173
D. A. Rudman
Affiliation:
MIT Department of Materials Science and Engineering, Cambridge MA 02139
Get access

Abstract

In order to better study and control the processes occurring in a reactive sputtering situation, a unique deposition method has been used in which the Ar-ion-beam sputtering of an elemental Nb target is combined with an auxiliary Ar/N2 plasma at the substrate. The ion source allows independent control of the sputtering parameters (ion flux, energy). The magnetically enhanced triode plasma provides a source of ionized and excited nitrogen at the film surface, and allows independent control of the substrate plasma parameters. A conductancelimiting enclosure surrounds the substrate, resulting in a pressure differential of nearly an order of magnitude between the substrate and target regions. This enables us to separate the substrate and target reaction regimes at low nitrogen flows. NbN has been investigated because of its technological importance and the fact that it is representative of transition metal nitrides.

With the substrate plasma off and N2 provided at the substrate, the cubic superconducting NbN (δ phase) is produced even at low N2 flows, when the target is in the unreacted, metallic state. Upon increasing the N2 flow, the nitrogen content of the films abruptly increases as the target reaction proceeds. The addition of the substrate plasma results in the nonsuperconducting hexagonal δ' phase, which to our knowledge has not previously been produced as a singlephase thin film. The electrical properties of the δ' phase are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

This work is sponsored by the Office of Naval Research and the Air Force Office of Scientific Research.

References

REFERENCES

1. Keskar, K.S., Yamashita, T., and Onodera, Y., Jpn. J. Appl. Phys. 10, 370 (1971).Google Scholar
2. Gavaler, J.R., Talvacchio, J. and Braginski, A.I., in Advances in Cryogenic Engineering Materials, ed. by Clark, J.P. and Reed, R.P. (Plenum, New York, 1985), Vol.32, p.627.Google Scholar
3. Thakoor, S., Lamb, J.L., Thakoor, A.P., and Khanna, S.K., J. Appl. Phys., 58, 4643 (1985).Google Scholar
4. Anderson, A.C., Lichtenwalner, D.J. and Brogan, W.T., presented at the 1988 Applied Superconductivity Conference, San Francisco, CA 1988 (to be published in the IEEE Trans. Magn.).Google Scholar
5. Bhushan, M., J. Vac. Sci. Technol. A 5, 2829 (1987)Google Scholar
6. Sundgren, J.-E., Johansson, B.-O. and Karlsson, S.-E., Thin Solid Films 80, 77 (1981).CrossRefGoogle Scholar
7. Savvides, N. and Window, B., J. Appl. Phys. 64, 225 (1988).Google Scholar
8. Pasternak, R.A. and Gibson, R., Acta Metall. 13, 1031 (1965).10.1016/0001-6160(65)90169-0Google Scholar
9. Lin, L.-J., Track, E.K., Cui, G.-J. and Prober, D.E., Physica 135B, 220 (1985).Google Scholar
10. Takei, K. and Nagai, K., Jpn. J. Appl. Phys. 20, 993 (1981).10.1143/JJAP.20.993CrossRefGoogle Scholar
11. Baba, Y., Sasaki, T.A. and Takano, I., J. Vac. Sci. Technol. A 6, 2945 (1988).Google Scholar
12. Brauer, G. and Kirner, H., Z. Anorg. Allg. Chem. 328, 34 (1964).Google Scholar
13. Mitsuoka, T., Yamashita, T., Nakazawa, T., Onodera, Y., Saito, Y. and Anayama, T., J. Appl. Phys. 32, 4788 (1968).10.1063/1.1655839Google Scholar
14. Kay, E., Parmigiani, F. and Parrish, W., J. Vac. Sci. Technol. A 5, 44 (1987).CrossRefGoogle Scholar
15. Lichtenwalner, D.J., Anderson, A.C. and Rudman, D.A., to be published in J. Vac. Sci. Technol., Jan/Feb (1989).Google Scholar
16. Guard, R.W., Savage, J.W. and Swarthout, D.G., Trans. Metall. Soc. AIME 239, 643 (1967).Google Scholar
17. Terao, N., J. Less Com. Metals 23, 159 (1971).Google Scholar
18. Greene, J.E. and Barnett, S.A., J. Vac. Sci. Technol. 21, 285 (1982).10.1116/1.571767CrossRefGoogle Scholar
19. Wolf, S.A., Singer, I.L., Cukauskas, E.J., Francavilla, T.L. and Skelton, E.F., J. Vac. Sci. Technol. 17, 411 (1980).Google Scholar