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Polarized Electroabsorption in Pulse and Continuous Light-Soaked a-Si:H - Structural Change other than Defect Creation

Published online by Cambridge University Press:  15 February 2011

H. Hata ,
T. Kamei ,
H. Okamoto  and
A. Matsuda
H. Hata
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki, 305, Japan, hata@etl.go.jp
T. Kamei
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki, 305, Japan, hata@etl.go.jp
H. Okamoto
Affiliation:
Department of Electrical Engineering, Osaka University, Toyonaka, Osaka 560, Japan
A. Matsuda
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki, 305, Japan, hata@etl.go.jp
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Abstract

Experimental results on structural change other than defect creation upon light-soaking of hydrogenated amorphous silicon (a-Si:H) are reported. A-Si:H films were light-soaked with laser pulses or with continuous (cw) light to steady-states, and then annealed at 170 °C in vacuum. The changes in electro-absorption (EA) signal, and defect density (Nd) from subgap absorption were measured as functions of light-soaking/annealing time. The results are: (1) EA ratio, which is defined as the ratio of anisotropie to isotropie components in EA signal, increases upon light-soaking with a time constant shorter by almost two orders of magnitude than that for Nd increase, and (2) shows saturation when extensively light-soaked. (3) The saturated values of EA ratio are comparable for both pulsed and cw light-soaking. (4) Both the EA ratio and Nd show recovery to the values in the annealed states. It is suggested that light-soaking causes a structural change in a short time, as manifested by EA ratio, and this changed structure works as the pathway leading to the defect creation. Thermal annealing is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 61
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1 Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
2 Stutzmann, M., Jackson, W. B., and Tsai, C. C., Phys. Rev. B32, 23 (1985).Google Scholar
3 Easer, E., J. Appl. Phys. 59, 3508 (1986).Google Scholar
4 Han, D. and Fritzsche, H., J. Non-Cryst. Solids 59&60, 397 (1983).Google Scholar
5 Fritzsche, H., Solid State Commun. 94, 953 (1995), and references therein.Google Scholar
6 Shepard, K., Smith, Z E., Aljishi, S., and Wagner, S., Appl. Phys. Lett. 53, 1644 (1988).Google Scholar
7 Zhang, Q., Takashima, H., Haui Zhou, J-H., Kumeda, M., and Shimizu, T., Mater. Res. Soc. Symp. Proc. 336, 269 (1994).Google Scholar
8 Redfield, D. and Bube, R. H., Appl. Phys. Lett. 54, 1037 (1989).Google Scholar
9 Hata, N., Ikeda, T., and Matsuda, A., Mater. Res. Soc. Symp. Proc. 420, 575 (1996).Google Scholar
10 Shimizu, K., Shiba, T., Tabuchi, T., and Okamoto, H., Jpn. J. Appl. Phys. 36, 29 (1997).Google Scholar
11 Hata, N., Ganguly, G., and Matsuda, A., Appl. Phys. Lett. 62, 1791 (1993).Google Scholar
12 Okamoto, H., Hattori, K., and Hamakawa, Y., J. Non-Cryst. Solids 137&138. 627 (1991).Google Scholar