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Positive and Negative Photoconductivity in Lead Telluride Doped With Gallium Epitaxial Films
Published online by Cambridge University Press: 10 February 2011
Abstract
We report on the photoconductivity and transient in n-PbTe(Ga) epitaxial films prepared by the hot wall technique on the <11 I>-BaF2 substrates. Photoconductivity measurements performed under continuous and pulse illumination in the temperature range 4.2-300 K give the photoresponse to be composed from negative and positive parts. The experimental results are interpreted assuming the mixed valence of Ga in lead telluride.
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- Copyright © Materials Research Society 2000