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Potential of the Ultra-thin Layer Fabricated by Wet-process as a Pore-seal for Porous Low-k Films

Published online by Cambridge University Press:  01 February 2011

Shoko Sugiyama Ono ,
Kazuo Kohmura ,
Hirofumi Tanaka ,
Kentaro Nakayama ,
Akifumi Kagayama ,
Toshihiko Tsuchiya ,
Makoto Nakaura ,
Osamu Matsuoka ,
Toshihiko Takaki  and
Kou Maekawa
Shoko Sugiyama Ono
Affiliation:
shoko.ono@mitsui-chem.co.jp, Mitsui Chemicals, Inc., Chiba, Japan
Kazuo Kohmura
Affiliation:
kazuo.kohmura@mitsui-chem.co.jp, Mitsui Chemicals, Inc., Chiba, Japan
Hirofumi Tanaka
Affiliation:
hirofumi.tanaka@mitsui-chem.co.jp, Mitsui Chemicals, Inc., Chiba, Japan
Kentaro Nakayama
Affiliation:
kentaro.nakayama@mitsui-chem.co.jp, Mitsui Chemicals, Inc., Chiba, Japan
Akifumi Kagayama
Affiliation:
akifumi.kagayama@mitsui-chem.co.jp, Mitsui Chemicals, Inc., Chiba, Japan
Toshihiko Tsuchiya
Affiliation:
toshihiko.tsuchiya@mitsui-chem.co.jp, Mitsui Chemical Analysis & Consulting Service Inc., Chiba, Japan
Makoto Nakaura
Affiliation:
makoto.nakaura@mitsui-chem.co.jp, Mitsui Chemical Analysis & Consulting Service Inc., Chiba, Japan
Osamu Matsuoka
Affiliation:
osamu.matsuoka@mitsui-chem.co.jp, Mitsui Chemicals, Inc., Chiba, Japan
Toshihiko Takaki
Affiliation:
toshihiko.takaki@mitsui-chem.co.jp, Mitsui Chemicals, Inc., Chiba, Japan
Kou Maekawa
Affiliation:
kou.maekawa@mitsui-chem.co.jp, Mitsui Chemicals, Inc., Chiba, Japan
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Abstract

We succeeded in fabricating ultra-thin (<3 nm-thick) layer on top of the surface of porous low-k. The roughness of the surface of porous low-k remains homogeneous even after covering by the thin layer. Furthermore, we found that such ultra-thin layer suppresses the diffusion of metal into porous low-k film. Concerning adhesion property, the abrasion between the thin layer and copper was not detected after annealing at 350 deg C in forming gas. TVS measurement suggested that pH control of solution is the key to reduce damages of porous low-k and mobile ions. We believe that such ultra-thin layer, which we propose here, has a potential as a pore seal layer for porous low-k films.

Keywords

thin filmbarrier layersemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F06-03
Copyright
Copyright © Materials Research Society 2010

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References

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