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Preparation of AlAsSb and Mid-Infrared (3–5μm) Lasers By Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

A. A. Allerman ,
R. M. Biefeld  and
S. R. Kurtz
A. A. Allerman
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
R. M. Biefeld
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
S. R. Kurtz
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
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Abstract

Mid-infrared (3–5 μm) infrared lasers and LEDs are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures display unique electronic properties that are beneficial to the performance of these midwave infrared emitters. We have grown AlAs1−xSbx epitaxial layers by metal-organic chemical vapor deposition using trimethylamine (TMAA) or ethyldimethylamine alane (EDMAA), triethylantimony (TESb) and arsine. We examined the growth of AlAsl−xSbx using temperatures of 500 to 600 °C, pressures of 70 to 630 torr, V/III ratios of 1–27, and growth rates of 0.3 to 2.7 μm/hour in a horizontal quartz reactor. The semi-metal properties of a p-GaAsSb/n-InAs heterojunction are utilized as a source for injection of electrons into the active region of lasers. A regrowth technique has been used to fabricate gain-guided lasers using AlAs1−xSbx for optical confinement with either a strained InAsSb/InAs multi-quantum well (MQW) or an InAsSb/InAsP strained layer superlattice (SLS) as the active region. Under pulsed injection, the InAsSb/InAs MQW laser operated up to 210K with an emission wavelength of 3.8–3.9 μm. Under pulsed optical pumping, the InAsSb/InAsP SLS operated to 240K with an emission wavelength of 3.5–3.7 μm. LED emission has been observed with both active regions in both p-n junction and semi-metal injection structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 43
Copyright
Copyright © Materials Research Society 1997

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References

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