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Preparation of Microcrystalline Silicon with the Layer-by-Layer Technique at Various Plasma Excitation Frequencies
Published online by Cambridge University Press: 15 February 2011
Abstract
For application as nucleation layer in thin film devices, microcrystalline silicon was deposited with the layer-by-layer technique using plasma excitation frequencies between 27 and 95 MHz, various hydrogen treatment times and various film thicknesses per layer. An optimum phase transformation is found at an intermediate plasma excitation frequency, i.e. at this frequency the shortest hydrogen annealing time is necessary for an effective amorphous-to-crystalline phase transformation.
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- Copyright © Materials Research Society 1997
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