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Process-dependent Coercive Fields in Undoped and Mn-doped BiFeO3 Films Formed on SrRuO3/Pt(111) Electrodes by rf Sputtering

Published online by Cambridge University Press:  31 January 2011

Jeong Hwan Kim ,
Hiroshi Funakubo ,
Yoshihiro Sugiyama  and
Hiroshi Ishiwara
Jeong Hwan Kim
Affiliation:
kim.j.af@m.titech.ac.jpqkrnsl@uos.ac.kr
Hiroshi Funakubo
Affiliation:
funakubo@iem.titech.ac.jp, Tokyo Institute of Technology, Tokyo, Japan
Yoshihiro Sugiyama
Affiliation:
sugiyama.y@jp.fujitsu.com, Fujitsu Laboratories, Atsugi, Japan
Hiroshi Ishiwara
Affiliation:
ishiwara.h.aa@m.titech.ac.jp, Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Tokyo, Japan
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Abstract

We deposited BiFeO3 (BFO) thin films on SrRuO3 (SRO)/Pt bottom electrodes by radio-frequency (RF) sputtering. Some samples were formed at the substrate temperature of 550 °C, and others were foremed at 450 °C and post-annealed at 650°C for crystallization. The coercive field in the post-annealed BFO film was smaller than that in the 550°C-deposited BFO film. The coercive field in Mn-doped BiFeO3 (BFMO) films which were deposited at 550 ˚C on SRO/Pt(111) was lower than that in undoped BFO films. Degradation of the remanent polarization was less significant in the post-annealed BFO film.

Keywords

ferroelectricelectrical propertiessputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F06-33
Copyright
Copyright © Materials Research Society 2010

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References

1 Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., Viehland, D., Vaithyanathan, V., Schlom, D. G., Waghmare, U. V., Spaldin, N. A., Rabe, K. M., Wuttig, M., and Ramesh, R., Science 299, 1719 (2003).Google Scholar
2 Yang, H., Jain, M., Suvorova, N. A., Zhou, H., Luo, H. M., Feldmann, D. M., Dowden, P. C., DePaula, R. F., Foltyn, S. R., and Jia, Q. X., Appl. Phys. Lett. 91, 072911 (2007).Google Scholar
3 Zheng, R. Y., Gao, X. S., Zhou, Z. H., and Wang, J., J. Appl. Phys. 101, 054104 (2007).Google Scholar
4 Ueno, R., Okaura, S., Funakubo, H., and Saito, K., Jpn. J. Appl. Phys. 44, L1231 (2005).Google Scholar
5 Singh, S. K., Ishiwara, H., and Maruyama, K., J. Appl. Phys. 100, 064102 (2006).Google Scholar
6 Kim, J.H., Funakubo, H., Ishiwara, H., Jpn. J. Appl. Phys. 48, 09KB02 (2009).Google Scholar
7 Singh, S. K., Ishiwara, H., and Maruyama, K., Appl. Phys. Lett. 88, 262908 (2006).Google Scholar