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Processing, Properties, and CMP Characteristics of a Spin-on Polymer: HSQ

Published online by Cambridge University Press:  17 March 2011

Wei-Jung Lin
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan
Chang-Jong Yang
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan
Wen-Chang Chen
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan
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Abstract

The structures and properties of the HSQ film during the cage/network transformation were studied by curing at 300°C for 1 hour. The experimental results show that the ratio of the network/cage structure of the cured HSQ film increases from 0.21 to 0.39 by curing. The porosity of the cured film increases from 10.0% to 12.3 %, while the refractive index decreases from 1.413 to 1.376 during curing. These results suggest that the dependence of the structure and properties of the HSQ film by curing. The CMP characteristics of HSQ were studied by using different kinds of slurries and surfactant. The CMP results of polishing HSQ suggest that the hardness and charge status of the abrasive, the interaction of the surfactant with the abrasive and film surface significantly affect the polishing results.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

1. Bremmer, J. N., Liu, Y., Gruszynski, K. G., and Dall, F. C., MRS. Res. Soc. Symp. Proc., 476, 37 (1997).10.1557/PROC-476-37Google Scholar
2. LoLoboda, M. J., Grove, C. M., and Schneider, R. F., J. Electrochem. Soc., 145, 2861(1998).10.1149/1.1838726Google Scholar
3. Albrecht, M. G. and Blanchette, C., J. Electrochem. Soc., 145, 4019(1998).10.1149/1.1838907Google Scholar
4. Siew, Y. K., Sarkar, G., Hu, X., See, A., and Chua, C. T., J. Electrochem. Soc., 147, 335(2000).10.1149/1.1393196Google Scholar
5. Chen, W. C., Lin, S. C., Dai, B. T., and Tsai, M. S., J. Electrochem. Soc., 146, 3004(1999).10.1149/1.1392043Google Scholar
6. Chen, W. C. and Yen, C. T., J. Polym. Res., 6, 197(1999).10.1007/s10965-006-0088-xGoogle Scholar
7. Murarka, S. P., MRS. Res. Soc. Symp. Proc., 511, 277(1998).10.1557/PROC-511-277Google Scholar